Badhise Ben Bakir
Dr. Badhise Ben Bakir received a Master's Degree in Physics from Université Claude Bernard, Lyon, France in 2003, and a Ph.D degree in Optical and Electrical Engineering from Ecole Centrale de Lyon, Ecully, France, in 2007. He joined the Optics and Photonics Department of Commissariat à l’Energie Atomique - Laboratoire d’Electronique et de Technologies de l’Information (CEA-LETI), Grenoble, France, in 2007.
Dr. Ben Bakir has been involved in several European and French national projects as a WP/Technical leader and Project Coordinator. Until 2016, he was in charge of the III-V on Silicon research and development activities for Telecom and Datacom applications. He also contributed to the development of amorphous Silicon and SiN platforms for non-linear optics applications. In 2016, he moved to visible applications where he developed directive and efficient III-V red-emitting µ-LEDs for AR/VR applications. In 2021, he joined the MIR-Sensing lab to develop hybrid Si/III-V MIR devices and circuits.
His research interests include the physics of optoelectronic devices and nanostructures, µLEDs/Lasers and Photonic Integrated Circuits, and micro-nano-fabrication related to Si and III-V based materials. His h-index is around 30 with more than 130 publications and 35 patents. He has also written three book chapters.
In recent years, chemical sensing has emerged as an active research area and a key application for Mid-IR silicon photonic devices due to their potential in spectroscopy, materials processing, chemical and biomolecular sensing, security, and industry applications. The Mid-IR spectral range (2.5 µm up to 12 µm) has been considered as the paradigm for innovative silicon/germanium photonic devices in this context. Mid-IR Si photonics has developed a novel class of integrated components that integrate the main building blocks required for chemical sensing, i.e., the laser sources, the PICs, and the detectors, at the chip level.
In this presentation, we will review recent key achievements from CEA-Leti in the miniaturization and co-integration of photonics devices at the chip and module levels to address cost, size, and power consumption, with a specific focus on the QCL-on-Silicon design and integration technology.
Thursday Photonics: Data & Sensing PM
Research Engineer, CEA-Leti
III/V Silicon Quantum Cascade Lasers and Photonic Integrated Circuits: Towards Ultimate Miniaturization of Mid-IR Sensors... more info