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He started research on 2D semiconductors in 2008, after joining EPFL and has made fundamental contributions to the study of the electronic properties of atomically thin TMDCs. His pioneering work on MoS2 transistors was the first demonstration of high-quality device on a 2D semiconductor.
Prior to joining EPFL as faculty, Kis was a postdoctoral researcher at UC Berkeley in the group of Alex Zettl. He received his Ph.D. in physics from EPFL in 2003 and received his MSc in physics from the University of Zagreb, Croatia. His major awards include the Latsis prize in 2004, ERC starting grant in 2009 and ERC consolidator grant in 2015, both awarded for research in the area of electrical properties of 2D transition metal dichalcogenides.
Abstract:2D dichalcogenide electronic materials and devicesAndras Kis, EPFL, Lausanne, Switzerland
The discovery of graphene marked the start of research in 2D electronic materials which was expanded in new directions with MoS2 and other layered semiconducting materials. They have a wide range of promising potential applications, including those in digital electronics, optoelectronics and flexible devices. Combining 2D materials in heterostructures can increase their reach even further.
In my talk, I will briefly review our research in 2D materials beyond graphene which started with the realisation of the first transistor based on a 2D material other than graphene, a single layer of semiconducting MoS2. Next, I will present our recent work going in the direction of exploiting the valley degree of freedom for devices that may one day be interesting as an alternative to CMOS.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.