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Advanced Simulation for NVM

Published on 8 July 2019

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​Friday, June 28th 2019

Advanced Computational Approaches for Non-Volatile Memory

This workshop will gather the best scientists in simulation of non-volatile memories —MRAM, PCRAM and RRAM. From device model to circuit simulation, the most advanced computational approaches will be discussed, with a focus on recent R&D results and the current technological context —spintronic, ferroelectric, multilevel, selector, neuromorphic etc. 

For who?

  • Scientists and experts

Program


​08:30   Registration & Welcome coffee
​09:00
​Introduction
  • CEA-Leti, P.Blaise
​SPIN RELATED AND MAGNETIC MEMORY - Chairman: F.Triozon, CEA-Leti
​09:10
Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell
  • TU Wien, Viktor Sverdlov
​09:35
​High Speed MRAM Concepts for Cache Applications and Beyond
  • CEA-Spintec, Liliana Prejbeanu
​10:00
​Ab-Initio Material Design for Non-Volatile Memory
  • Western Digital, Derek Stewart
10:25   Coffee Break & Networking
​10:45
​Atomistic Insights on the Role of Material and Interfaces on the Electrical Performance of Magnetic Tunneling Junction Memories and Memory Selector
  • IMEC, Geoffrey Pourtois
​11:10
​Atomic-Scale Modeling Solution for Memory Devices
  • Synopsys, Umberto Martinez
​RESISTIVE RAM - Chairman: G.Molas, CEA-Leti
​11:35
​Structural Features Controlling NVM Characteristics: Identifying Atomic Properties Targeting Performance Requirements
  • Aerospace Corporation, Gennadi Bersuker
​12:00
​Ab Initio Modeling of CBRAM Cells
  • ETH Zürich, Mathieu Luisier
​12:30   Buffet Lunch & Networking
​14:00
​Understanding the Role of Extended Defects in Resistive Switching and Magnetic Memory Materials
  • York University, Keith McKenna
​14:25
​Ionic Transport and Polarization Effects Under Electric Fields
  • CNR-SISSA, Nicolas Salles
​14:50
​Revealing the Working Mechanism of Resistive Memory Through First-Principles Calculations
  • Huazhong U, Kan-Hao Xue
​BEYOND ATOMISTIC - Chairman: B.Sklénard, CEA-Leti
​15:15
​Ab Initio Thermal Transport Modeling
  • CEA-Liten, Natalio Mingo
​15:40
​TCAD Simulation for ePCM Technology Development
  • STMicro Agrate, Elisa Petroni
​16:05   Coffee Break & Networking
​16:30
​Device Simulation of Ferroelectric Field-Effect Transistors Based on the Landau-Khalatnikov Equation
  • AIST, Junichi Hattori
​16:55
​Resistive Memories for Neuromorphic Hardware
  • CEA-Leti, Elisa Vianello
​17:20    End

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