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Advanced Simulation for NVM

Published on 11 June 2019




Friday, June 28th 2019

Advanced Computational Approaches for Non-Volatile Memory

This workshop will gather the best scientists in simulation of non-volatile memories MRAM, PCRAM and RRAM. From device model to circuit simulation, the most advanced computational approaches will be discussed, with a focus on recent R&D results and the current technological context spintronic, ferroelectric, multilevel, selector, neuromorphic etc. 

For who?

  • Scientists and experts

Program


​08:30   Registration & Welcome coffee
09:00
​Introduction
  • CEA-Leti, P.Blaise
SPIN RELATED AND MAGNETIC MEMORY - Chairman: F.Triozon, CEA-Leti
​09:10
Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell
  • TU Wien, Viktor Sverdlov
​09:35
​High Speed MRAM Concepts for Cache Applications and Beyond
  • CEA-Spintec, Liliana Prejbeanu
10:00
Ab-Initio Material Design for Non-Volatile Memory
  • Western Digital, Derek Stewart
10:25   Coffee Break & Networking
10:45
Atomistic Insights on the Role of Material and Interfaces on the Electrical Performance of Magnetic Tunneling Junction Memories and Memory Selector
  • IMEC, Geoffrey Pourtois
11:10
Atomic-Scale Modeling Solution for Memory Devices
  • Synopsys, Umberto Martinez
RESISTIVE RAM - Chairman: G.Molas, CEA-Leti
​11:35
Structural Features Controlling NVM Characteristics: Identifying Atomic Properties Targeting Performance Requirements
  • Aerospace Corporation, Gennadi Bersuker
​12:00
​Ab Initio Modeling of CBRAM Cells
  • ETH Zürich, Mathieu Luisier
12:30   Buffet Lunch & Networking
​14:00
Understanding the Role of Extended Defects in Resistive Switching and Magnetic Memory Materials
  • York University, Keith McKenna
​14:25
​Ionic Transport and Polarization Effects Under Electric Fields
  • CNR-SISSA, Nicolas Salles
​14:50
Revealing the Working Mechanism of Resistive Memory Through First-Principles Calculations
  • Huazhong U, Kan-Hao Xue
BEYOND ATOMISTIC - Chairman: B.Sklénard, CEA-Leti
15:15
Ab Initio Thermal Transport Modeling
  • CEA-Liten, Natalio Mingo
​15:40
​TCAD Simulation for ePCM Technology Development
  • STMicro Agrate, Elisa Petroni
16:05   Coffee Break & Networking
16:30
​Device Simulation of Ferroelectric Field-Effect Transistors Based on the Landau-Khalatnikov Equation
  • AIST, Junichi Hattori
16:55
Resistive Memories for Neuromorphic Hardware
  • CEA-Leti, Elisa Vianello
17:20    End

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